☰ Category

4H-Silicon Carbide MOSFET

 

Marketed By :  Scholars' Press   Sold By :  Kamal Books International  
Delivery in :  10-12 Business Days

 

Check Your Delivery Options

Product Out of Stock Subscription

(Notify me when this product is back in stock)

Rs. 4,463

Availability: Out of stock

 
  • Product Description
 

Silicon carbide is the only wide band gap semiconductor that has a native oxide, and a leading candidate for development of next-generation, energy efficient, high power metal-oxide-semiconductor field effect transistors (MOSFETs). Progress in this technology has been limited by the semiconductor-dielectric interface structure and its effect on the inversion layer mobility. The major objective of this work is to study and improve 4H-SiC MOSFET interface structure, defect states and inversion layer mobility on the (11-20) crystal face of SiC (a-face), employing nitrogen and phosphorous passivation. We also use these results to explore the effect of reactive ion etching on the a-face, an important aspect of processing optimum power devices. We correlate electrical measurements, i.e. current-voltage (I-V) and capacitance-voltage (C-V) with physical characterization including X-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM), transmission electron microscopy (TEM), secondary ion mass spectrometry (SIMS) and medium energy ion scattering (MEIS).

Product Specifications
SKU :COC79293
AuthorGang Liu
LanguageEnglish
BindingPaperback
Number of Pages124
Publishing Year2014-03-17T00:00:00.000
ISBN9783639712483
Edition1 st
Book TypeElectronics & communications engineering
Country of ManufactureIndia
Product BrandScholars' Press
Product Packaging InfoBox
In The Box1 Piece
Product First Available On ClickOnCare.com2015-10-08 00:00:00
0 Review(s)