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A Study of Si-Ge Interdiffusion for SiGe based Semiconductor Devices


Marketed By :  LAP LAMBERT Academic Publishing   Sold By :  Kamal Books International  
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  • Product Description

This book focused on interdiffusion behaviors in SiGe heterostructures under different strain conditions. A unified Si-Ge interdiffusivity model without strain’s impact was built over the full Ge fraction range for the first time. It was demonstrated that the unified model is valid for Si-Ge interdiffusion under conventional furnace anneals, and advanced anneal techniques such as soak and spike rapid thermal anneals. In addition, the role of biaxial compressive strain in Si-Ge interdiffusion was fully clarified. Compressive strain can enhance Si-Ge interdiffusion greatly, by tens to a hundred times at certain temperature range. Moreover, some new light was shed on a more complicated case, interdiffusion with strain relaxation. The interdiffusivity models can be employed to predict and estimate interdiffusion in SiGe heterostructures for next-generation semiconductor devices, and to optimize the design of SiGe epitaxial structures and thermal budgets for fabrication processes. On the theoretical side, these models can be used as reference lines for studies on Si-Ge interdiffusion with doping and/or with defects.

Product Specifications
SKU :COC79229
AuthorYuanwei Dong
Number of Pages212
Publishing Year2014-08-18T00:00:00.000
Edition1 st
Book TypeElectronics & communications engineering
Country of ManufactureIndia
Product BrandLAP LAMBERT Academic Publishing
Product Packaging InfoBox
In The Box1 Piece
Product First Available On ClickOnCare.com2015-10-08 00:00:00