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Advanced Simulation Methods For Gallium Nitride Electronic Devices


Marketed By :  VDM Verlag Dr. Müller   Sold By :  Kamal Books International  
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  • Product Description

In this work, an accurate analysis of state-of-the- art high-frequency and high-power High Electron Mobility Transistor (HEMT) devices has been performed by using both commercial simulation tools and a full band Cellular Monte Carlo (CMC) simulator, in order to investigate the most important factors allowing improvements in reliability and manufacturability of AlGaN/GaN HEMTs at mm-wave frequencies. The effects of polarization charge on the electrostatic potential distribution across the heterostructure of a GaN HEMT device was first investigated. Subsequently, an intensive characterization on more than 10 wafers has been performed, in order to identify parasitic effects related to charge trapping phenomena. The effects of threading edge dislocations on the electron transport properties of GaN HEMT devices were then investigated. Finally, several studies have been performed on N-Face and Ga-face structures (both in enhancement and depletion mode). Scaling effects on the RF performance of these devices have also been investigated.

Product Specifications
SKU :COC21633
AuthorFabio Alessio Marino
Number of Pages120
Publishing Year12/24/2010
Edition1 st
Book TypeElectronics & communications engineering
Country of ManufactureIndia
Product BrandVDM Verlag Dr. Müller
Product Packaging InfoBox
In The Box1 Piece
Product First Available On ClickOnCare.com2015-07-28 00:00:00