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An NMOS Transistor with Localized Channel and Pocket Implantation


Marketed By :  LAP LAMBERT Academic Publishing   Sold By :  Kamal Books International  
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  • Product Description

As the channel length of transistor is reduced,well-known charge sharing effects in the channel and high electric fields at the drain-channel interface become important elements to impact CMOS device performance.Digital circuits fabricated with minimal channel lengths do not show significant performance improvement unless other device design issues such as parasitic source/drain capacitance and bulk effect are also resolved during the device design cycle.This book adresses both, how to improve short channel effect as well as decrease bulk effect and source/drain capacitance as the transistor effective channel length is reduced.

Product Specifications
SKU :COC62295
AuthorSalih Kilic and Ahmet Bindal
Number of Pages104
Publishing Year08.10.2014
Edition1 st
Book TypeElectronics & communications engineering
Country of ManufactureIndia
Product BrandLAP LAMBERT Academic Publishing
Product Packaging InfoBox
In The Box1 Piece
Product First Available On ClickOnCare.com2015-08-05 00:00:00
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