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An SOI LDMOS For Better Switch Application

 

Marketed By :  LAP LAMBERT Academic Publishing   Sold By :  Kamal Books International  
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Rs. 3,718

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  • Product Description
 

This book is proposed to develop an SOI (Silicon on Insulator) LDMOS in which a drift region of 1-mm is added to a conventional n-MOS and compare them on various aspects. The drift region utilizes the RESURF effect that is utilized to distribute the electric field into the LDD region. It is found using two dimensional simulations that the addition of a drift region of 1-mm in LDMOS improves the performance of the device in terms of breakdown-voltage and switching-speed over the conventional MOSFET.

Product Specifications
SKU :COC91926
AuthorArindam Biswas,Arzoo Rafique and Anup Kumar Bhattacharjee
LanguageEnglish
BindingPaperback
Number of Pages84
Publishing Year2013-06-01T00:00:00.000
ISBN9783659406751
Edition1 st
Book TypeElectronics & communications engineering
Country of ManufactureIndia
Product BrandLAP LAMBERT Academic Publishing
Product Packaging InfoBox
In The Box1 Piece
Product First Available On ClickOnCare.com2015-10-08 00:00:00