Call Us 080-41656200 (Mon-Sat: 10AM-8PM)
Free Shipping above Rs. 1499
Cash On Delivery*

Defect Studies in III-V Semiconductors by Positron Annihilation

 

Marketed By :  LAP LAMBERT Academic Publishing   Sold By :  Kamal Books International  
Delivery in :  10-12 Business Days

 

Check Your Delivery Options

 
Rs. 4,835

Availability: In stock

 
  • Product Description
 

III-V compound semiconductors are used in the fabrication of a variety of discrete and integrated optoelectronic devices due to their superior electronic properties. Diffusion is one of the fundamental processes employed in the semiconductor industry. This process plays a key role in the kinetics of many microstructural changes that occur during processing of semiconductors. Lattice defects robustly influence or even determine most of the important properties, for example the optical and electrical properties, of semiconductor materials. They may reduce the density of free carriers or mediate dopant diffusion and are thus of essential technological importance. Studying the formation of point defects responsible for the occurrence of diffusion and their behavior are of vital importance to the understanding of the properties of these materials and to their successful application in semiconductor devices. Positron annihilation spectroscopy is a powerful tool for detecting and studying the lattice defects in materials. This book is dedicated to investigations of crystal defects in III-V compound semiconductors by means of positron annihilation.

Product Specifications
SKU :COC90313
AuthorMohamed Elsayed
LanguageEnglish
BindingPaperback
Number of Pages168
Publishing Year2013-09-13T00:00:00.000
ISBN9783659452192
Edition1 st
Book TypePhysics
Country of ManufactureIndia
Product BrandLAP LAMBERT Academic Publishing
Product Packaging InfoBox
In The Box1 Piece
Product First Available On ClickOnCare.com2015-10-08 00:00:00