Design of Capacitorless Memory Cell based on GaN Heterostructures

Design of Capacitorless Memory Cell based on GaN Heterostructures


Marketed By :  LAP LAMBERT Academic Publishing   Sold By :  Kamal Books International  
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  • Product Description

This book investigates the possibility to design and analyze a memory element using Gallium Nitride (GaN) based Heterojunction Field Effect Transistors (HFETs). The memory element uses a single transistor and zero capacitor. This memory takes advantage of the natural coexistence of both hole and electron gases in such heterojunction based devices. The two dimensional hole gas has been considered in the past as parasitic. It triggers hysteresis and transient effects within the FET output characteristics. Using this phenomenon, however, we propose an implementation of the memory concept in GaN/AlGaN/GaN HFET. The system is composed of the GaN/AlGaN/GaN regions.It may be integrated with conventional GaN HFET based technology as well. The present studies are performed using the ATLAS device simulator by Silvaco International.

Product Specifications
SKU :COC55264
Country of ManufactureIndia
Product BrandLAP LAMBERT Academic Publishing
Product Packaging InfoBox
In The Box1 Piece
Product First Available On ClickOnCare.com2015-06-08
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