Experiments were carried out on a high blocking voltage Schottky diode (>2KV) fabricated on an n-type 4H-polytype Silicon Carbide. The sample is low doped in low 10E14 (carrier concentration is 2.4*10E14 cm- 3) and thickness of epitaxial layer is 30um. The substrate is n-type of doping in the mid 10E18 range. Silicon carbide (SiC) is selected because it has a wide bandgap, high thermal conductivity, high breakdown electric field and high electron saturation velocity. Therefore, SiC can be used as high temperature electronics, high power switching and high frequency power generation.I-V and C-V measurements were performed on the sample. The leakage current was found to be below 10E-6 A with applied reverse bias rating as high as Vr =10v. From the capacitance voltage(C-V) measurements we obtain the carrier concentration to be 2.4*10E14 cm- 3.Characterization of deep levels in n-type 4H- polytype SiC has been carried out using deep level transient spectroscopy. One deep level at Ec?0.23 and Capture Cross Section ? of this deep level is 1.59*10-20 cm 2.