Ferroelectric materials have a wide range of applications in making of ferroelectric capacitors, ferroelectric random access memories, non volatile random access memories, dynamic random access memories, metal ferroelectric semiconductor field effect transistors, microelectronic mechanical systems, sensors, actuators, tunable resonators, variable frequency oscillators and transducers. The most of these devices need low voltage operation, therefore, a ferroelectric material possessing low coercive field in thin film form is essential. This book provides the vital information to fabricate the spray deposited composite films of ferroelectric material embedded in polymer matrix, which have low coercive field. The structural, ferroelectric, back switching, current density - electric field, switching kinetics, dielectric, capacitance – voltage, conductance - voltage studied on the composite films of KNO3: PVA have been presented & interpreted. The analysis of switching kinetics of these composite films with application of nucleation limited switching model has also been discussed. On the whole, this book explore the possibilities to use these composite films in the future memory devices.