Molecular Beam Epitaxy (MBE) is a process by which semiconductor films are grown on the substrate by physical vapor deposition of the source material in an ultra high vacuum environment. Spatial variations in flux are a result of the shape of the crucible and the geometry of the growth chamber. A process simulation tool for MBE based on a phenomenological model is proposed and elaborated. The tool can be used in industry to simulate the effusion and deposition of molecular beams by taking into account different parameters that influence the process. Additionally, it can generate deposition profiles created by effusing flux species, on the platen containing the wafers.