Call Us 080-41656200 (Mon-Sat: 10AM-8PM)
Free Shipping above Rs. 1499
Cash On Delivery*

Gate leakage variability in nano-CMOS transistors

 

Marketed By :  VDM Verlag Dr. Müller   Sold By :  Kamal Books International  
Delivery in :  10-12 Business Days

 

Check Your Delivery Options

 
Rs. 5,066

Availability: In stock

 
  • Product Description
 

Gate leakage variability in nano-scale CMOS devices is investigated through advanced modelling and simulations of planar, bulk-type MOSFETs. The motivation for the work stems from the two of the most challenging issues in front of the semiconductor industry - excessive leakage power, and device variability - both being brought about with the aggressive downscaling of device dimensions to the nanometer scale. The aim is to deliver a comprehensive tool and understanding for the assessment of gate leakage variability in realistic nano-scale CMOS transistors. The book describes a 3D modelling and simulation framework for the study of device variability, and presents a case study of gate leakage variability in a 25 nm square gate n-type MOSFET, taking into account the combined effect of random dopant fluctuations and oxide thickness fluctuations. An important chapter is dedicated to the analysis of the non-abrupt band-gap and permittivity transition at the Si/SiO2 interface, and reveals a strong impact on subband quantisation, and enhancement of capacitance and leakage, relative to simulations with an abrupt band-edge transition at the interface.

Product Specifications
SKU :COC39619
AuthorStanislav Markov
LanguageEnglish
BindingPaperback
Number of Pages184
Publishing Year2010-05-01T00:00:00.000
ISBN978-3639220995
Edition447 st
Book TypeElectronics & communications engineering
Country of ManufactureIndia
Product BrandVDM Verlag Dr. Müller
Product Packaging InfoBox
In The Box1 Piece
Product First Available On ClickOnCare.com2015-01-08 00:00:00