The reliability of InGaN/GaN light emitting diodes (LEDs) with different emission wavelengths and different geometries was studied. Device performances, like current-voltage characteristics, 1/f noise spectrum, leakage, static resistance, were measured. The devices underwent a 1000-hr constant-current stress test and their optical output degradation rate was examined. The results were explained by cross-related data.
|Number of Pages||80|
|Book Type||Electronics & communications engineering|
|Country of Manufacture||India|
|Product Brand||LAP LAMBERT Academic Publishing|
|Product Packaging Info||Box|
|In The Box||1 Piece|
|Product First Available On ClickOnCare.com||2015-10-08 00:00:00|