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III-Nitride Optoelectronic Materials and Devices

 

Marketed By :  LAP LAMBERT Academic Publishing   Sold By :  Kamal Books International  
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  • Product Description
 

The objective of this book is to characterize the optoelectronic properties of quaternary n-Al0.08In0.08Ga0.84N thin films grown via plasma assistance molecular beam epitaxy on sapphire (Al2O3) and silicon (Si) substrates for different optoelectronic applications, including Al0.08In0.08Ga0.84N (MSM) photodetectors (PDs), solar cells and multi-quantum well (MQW) laser diodes (LDs). Defect-free films with high structural, optical and electrical qualities were obtained. X-ray diffraction analysis was used to characterize small full width at half maximum intensity of diffraction peaks, low compressive strain, relatively large grain size and low dislocation density which produced smooth surfaces without any phases separation or cracks. Scanning electron microscopy, energy-dispersive X-ray microscopy and atomic force microscopy images confirmed these characterizations. Furthermore, high optical quality, as well as high absorption and absorption coefficients were observed using PL and UV-VIS spectroscopy. Finally, the simulation of Al0.08In0.08Ga0.84N MQW LD using ISE TCAD software was designed and optimized. The best performance of the LDs was achieved at a quantum well number of 4.

Product Specifications
SKU :COC90205
AuthorAlaa Jabbar Ghazai,Haslan Abo Hassan and Z. Hassan
LanguageEnglish
BindingPaperback
Number of Pages212
Publishing Year2013-02-26T00:00:00.000
ISBN9783659351051
Edition1 st
Book TypePhysics
Country of ManufactureIndia
Product BrandLAP LAMBERT Academic Publishing
Product Packaging InfoBox
In The Box1 Piece
Product First Available On ClickOnCare.com2015-10-08 00:00:00