Modeling and Simulation of Physical Properties in Semiconductors


Marketed By :  LAP LAMBERT Academic Publishing   Sold By :  Kamal Books International  
Delivery in :  10-12 Business Days

₹ 4,396

Availability: Out of stock


Delivery :

5% Cashback on all Orders paid using MobiKwik Wallet T&C

Free Krispy Kreme Voucher on all Orders paid using UltraCash Wallet T&C
Product Out of Stock Subscription

(Notify me when this product is back in stock)

  • Product Description

The empirical concepts as electronegativity, ionicity and bulk modulus are very important for studying the basic properties of solids. The difficulty in defining the ionicity and bulk modulus lies in transforming a qualitative or verbal concept into a quantitative, mathematical formula. My works concentrated on using empirical pseudopotential method (EPM) to calculate electronic properties (ionicity factor) ƒi in terms of the difference between the first and second valence band at point X, Eg (V2-V1), and making various formulas as a function of transverse effective charge eT*, nearest-neighbor distance d, cohesive energy Ecoh, and refractive index n0. I had investigated for the structural properties (bulk modulus) B0 new models in terms of the cation part SC of the charge density, the transition pressure Pt and the lattice parameter. This study has three essential goals: 1. Define the ionicity factor and the bulk modulus by the electronic band structure and charge density, respectively. 2. Establish a new scale. 3. Study the validity of the new models under external effects. The reasonable results compared with experimental and theoretical ones are obtained.

Product Specifications
SKU :COC27672
Country of ManufactureIndia
Product BrandLAP LAMBERT Academic Publishing
Product Packaging InfoBox
In The Box1 Piece
0 Review(s)