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NQS Effects Investigation For Compact Bipolar Transistor Modeling


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  • Product Description

Modern high speed (RF) transistors encounter certain delay while operated at high frequency or under fast transient condition. This effect is named as Non Quasi Static (NQS) effect. In this work, NQS effect is analyzed in a concise manner so that it can be readily implemented in a compact model using the VerilogA description language. The basic physics behind this effect is investigated in small signal domain and results are compared with the published work. Compact modeling with HICUM model is performed with both measured and device simulated data. At last, an improved excess phase circuit is proposed to model the NQS effect.

Product Specifications
SKU :COC79301
AuthorArkaprava Bhattacharyya
Number of Pages156
Publishing Year2014-04-28T00:00:00.000
Edition1 st
Book TypeElectronics & communications engineering
Country of ManufactureIndia
Product BrandLAP LAMBERT Academic Publishing
Product Packaging InfoBox
In The Box1 Piece
Product First Available On ClickOnCare.com2015-10-08 00:00:00
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