(i) OSL measured at room temperature (25øC): The lower annealed sample followed by beta doses up to 25.2Gy exhibits the non-exponential shape of decay curve. It is attributed to role of shallow TL traps. The decay curve shifts toward exponential side with growth in OSL for higher annealed sample followed by higher dose. It is due to effect of phase transformation in quartz. (ii) OSL measured at 160øC: The non-exponential shape of decay curve still appears at identical lower physical condition. It is attributed to re-trapping of optically released electron still exists. It is evidence to growth of post OSL-TL peaks at 230øC and 375øC. (iii) Post Irradiation Heat Treatment (PIHT) at 290øC: Act as thermal transfer OSL process. In present work, OSL sensitivity doesn't show consistent behavior with PIHT. Either charges released for system or captured into deep traps. (iv) Cyclic OSL at 160øC: The OSL intensity decreases with successive cycle. The post OSL-TL glow curve indicates the stability of 230øC peak and slow bleachability of 375øC peak. The ESR spectra suggested the relation between luminescence output and color centers (E1' and Ge).