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Pulsed capacitance technique for evaluation of barrier structures


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  • Product Description

Traditional semiconductor device characterization techniques based on capacitance measurements using a small test signal, the different modifications of deep level transient spectroscopy etc. are limited if devices contain a large density of deep traps, exhibiting enhanced generation currents. In this book, a pulsed capacitance technique for barrier evaluation by linearly increasing voltage (BELIV) is presented. The basics of analysis of the current transients for reverse and forward biased junctions are described. The measurement schemes and regimes for profiling of dopant distribution, for thermo-emission and photo-ionization spectroscopy of traps, for the in situ control of radiation damage of particle detectors are discussed. Applications of this BELIV technique for characterization of multi-layered structures of homo- and hetero- junctions formed in fabrication of diode, particle detector, thyristor and solar-cell devices are demonstrated. The BELIV technique is shown to be a powerful tool for fast and comprehensive evaluation of the parameters of barrier structures.

Product Specifications
SKU :COC90371
AuthorEugenijus Gaubas,Tomas Ceponis and Juozas-Vidmantis Vaitkus
Number of Pages84
Publishing Year2013-12-04T00:00:00.000
Edition1 st
Book TypePhysics
Country of ManufactureIndia
Product BrandLAP LAMBERT Academic Publishing
Product Packaging InfoBox
In The Box1 Piece
Product First Available On ClickOnCare.com2015-10-08 00:00:00