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Reliability Characteristics of Rare-earth oxides and Gate Stacks on Ge

 

Marketed By :  LAP LAMBERT Academic Publishing   Sold By :  Kamal Books International  
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  • Product Description
 

Germanium as a replacement for Silicon in MOS devices, offers a higher electron (2x) and hole (4x) mobility than Si. A Ge channel MOS technology has been expected to be implemented into future high-speed Si platform, because of the enhanced carrier transport. The poor quality of the native oxide (GeO2) however hampered the use of this material in large scale production. One potential solution is the use of Rare-earth oxides (REOs) such as CeO2, La2O3, Dy2O3, Gd2O3, which can be directly deposited on Ge-substrates. The reliability characteristics of these CMOS devices on Ge-substrates are of important concerns and the main subject of this book. Reliability characteristics such as Charge trapping, SILC, defects generation, dielectrics degradation, polarization relaxation and several other issues are addressed here. A pertinent finding is discussed in this book that it shows Maxwell-Wagner instabilities (that is charge accumulation at the interface of two dielectrics). The gate stacks devices show initially dielectric relaxation effects followed by charge trapping that finally reaches dielectric breakdown. As a matter of fact, the gate stack itself is the cause of charge trapping.

Product Specifications
SKU :COC90356
AuthorM. Shahinur Rahman
LanguageEnglish
BindingPaperback
Number of Pages228
Publishing Year2013-11-29T00:00:00.000
ISBN9783659451836
Edition1 st
Book TypePhysics
Country of ManufactureIndia
Product BrandLAP LAMBERT Academic Publishing
Product Packaging InfoBox
In The Box1 Piece
Product First Available On ClickOnCare.com2015-10-08 00:00:00