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Reliability Study Of Ingap/gaas Heterojunction Bipolar Transistors

 

Marketed By :  Scholars' Press   Sold By :  Kamal Books International  
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  • Product Description
 

Nowadays InGaP/GaAs heterojunction bipolar transistors (HBTs) are the preferred technology of high-performance microwave monolithic integrated circuits (MMICs) due to their inherently excellent characteristics. With the smaller dimensions for improving functionality of InGaP/GaAs HBTs, which dissipate large amount of power and result in heat flux accumulated in the device junction, reliability issues are the first concern for the commercialization. To identify the origins of the electrothermal stress-induced device performance degradations observed experimentally, 2-D TCAD simulations were carried out. Using this approach, it is suggested that the acceptor-type trapping states located in the emitter bulk are responsible for the post-stress base current instability. The performances of InGaP/GaAs HBT-based MMICs are sensitive to the variation of core device characteristics. However, detection of this critical issue is difficult due to the circuit complexity. Thus, a practical methodology has been developed to predict the stress impacts on the HBT-based MMICs, which provides a potential way for the RF/microwave industry to save tens of millions of dollars annually in testing costs.

Product Specifications
SKU :COC92049
AuthorXiang Liu
LanguageEnglish
BindingPaperback
Number of Pages100
Publishing Year2013-10-16T00:00:00.000
ISBN9783639700503
Edition1 st
Book TypeElectronics & communications engineering
Country of ManufactureIndia
Product BrandScholars' Press
Product Packaging InfoBox
In The Box1 Piece
Product First Available On ClickOnCare.com2015-10-08 00:00:00
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