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Response Time of Charge Carriers in Semiconductors


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  • Product Description

As the summary, carrier relaxation dynamics in non-doped BSO and Cr doped BSO is studied using the PIA change by nanosecond pulse excitation using a frequency doubled Nd:YAG laser. The time-resolved PIA decay in non-doped BSO relaxes in a few hundred milli second whereas for the Cr doped BSO, this happens in time of the order of hundred seconds. The Cr defects in BSO increase the density of the shallow and deep trap levels that increase relatively the life time of the charge carriers compared to non-doped BSO. The microoptical mechanism for the PIA decay is related to the carrier tunneling between localized state of each Cr ions than carrier trapping. From the optical absorption spectra measurements, the Cr doped BSO has shifted the intrinsic edge to the longer wavelength and gave rise to new absorption bands in the visible and NIR ranges.

Product Specifications
SKU :COC82671
AuthorGetasew Admasu Wubetu
Number of Pages68
Publishing Year2011-01-04T00:00:00.000
Edition1 st
Book TypeProduction engineering
Country of ManufactureIndia
Product BrandLAP LAMBERT Academic Publishing
Product Packaging InfoBox
In The Box1 Piece
Product First Available On ClickOnCare.com2015-10-08 00:00:00
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