Category

Simulation of InGaN Blue Laser Diode

 

Marketed By :  LAP LAMBERT Academic Publishing   Sold By :  Kamal Books International  
Delivery in :  10-12 Business Days

 
₹ 5,886

Availability: Out of stock

 

Delivery :

Product Out of Stock Subscription

(Notify me when this product is back in stock)

  • Product Description
 

In this book, the design of InGaN LDs structures including multi quantum wells (MQWs) active region device are described and investigated by integrated system engineering technology computer aided design (ISE TCAD) device simulator. The parameters of the LDs structures are varied and optimized for high performance. This optimization study involves aspects such as thickness of active region, doping, thickness of stopper layer region, thickness of quantum wells and quantum barriers, number of quantum wells and several approaches to improve and achieve high efficiency, low threshold current and high output power of InGaN LDs. The basic LDs structures treated here are Fabry?Perot type InGaN double heterostructure (DH), separate confinement heterostructure (SCH) and multi quantum wells (MQWs).High performance LD has been obtained by using multi quantum wells incorporated with the optimized parameters. The lowest threshold current, higher external quantum efficiency and characteristic temperature are obtained when the number of InGaN well layers is two, at our laser emission wavelength of 415 nm, which is related to the problem of inhomogeneous carrier.

Product Specifications
SKU :COC101027
Country of ManufactureIndia
Product BrandLAP LAMBERT Academic Publishing
Product Packaging InfoBox
In The Box1 Piece
0 Review(s)