Simulation of MOSFETs BJTs and JFETs

 

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  • Product Description
 

Semiconductor devices are generally analyzed with relatively simple equations or with detailed computer simulations. Most text-books use these simple equations and show device diagrams that are frequently very simplified and occasionally incorrect. For example, the carrier densities near the pinch-off point in MOSFETs and JFETs and the minority carrier density in the base near the reverse-biased base-collector junction are frequently assumed to be zero or near zero. Also the channel thickness at the pinch-off point is often shown to approach zero. None of these assumptions can be correct. The research in this book addresses these points. These simulation results in this book provide a more complete understanding of device physics and device operation in those regions usually not addressed in semiconductor device physics books.

Product Specifications
SKU :COC56486
AuthorXuan Yang and Dieter K. Schroder
LanguageEnglish
BindingPaperback
Number of Pages100
Publishing Year2012-01-04T00:00:00.000
ISBN978-3847323457
Edition1 st
Book TypeElectronics & communications engineering
Country of ManufactureIndia
Product BrandLAP LAMBERT Academic Publishing
Product Packaging InfoBox
In The Box1 Piece
Product First Available On ClickOnCare.com2015-06-08 00:00:00
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