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Single Event Upset in Dual- and Triple-Well SRAMs


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  • Product Description

CMOS technologies can be either dual-well or triple-well. Triple-well technology has several advantages compared to dual-well technology in terms of electrical performance. Differences in the single-event response between these two technology options, however, are not well understood. This work presents a comprehensive analysis of alpha, neutron and heavy ion-induced upsets in 65-nm and 40-nm dual-well and triple-well CMOS SRAMs. Primary factors affecting the charge-collection mechanisms for a wide range of particle energies are investigated, showing that triple-well technology is more vulnerable to low-LET particles, while dual-well technology is more vulnerable to high-LET particles. For the triple-well technology, charge confinement and multiple-transistor charge collection triggers the “Single Event Upset Reversal” mechanism that reduces sensitivity at high LETs.

Product Specifications
SKU :COC56567
AuthorIndranil Chatterjee
Number of Pages96
Publishing Year2012-07-06T00:00:00.000
Edition1 st
Book TypeElectronics & communications engineering
Country of ManufactureIndia
Product BrandLAP LAMBERT Academic Publishing
Product Packaging InfoBox
In The Box1 Piece
Product First Available On ClickOnCare.com2015-06-08 00:00:00
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