The II – VI semiconductors, such as Zinc Sulphide (ZnS) have attracted growing interest owing to their possible application in electro-optic device, it is important semiconductor material for the development of various modern technologies of solid – state devices. Zinc Sulphide have wide direct band gap of about (3.50 -4.1) eV in the UV region; it is used as a key material for blue light emitting diodes and other optoelectronic devices such as cathodluminescent displays , multilayer dielectric filters, electroluminescent displays and multilayer dielectric filters. Zinc Sulpide is highly studied as a window layer in hetrojunction photovoltaic solar cells because the wide band decreases the window absorption loss and improve the short circuit current of the cell. In the area of optics ZnS can be used as reflector, because of it's high visible range. There have been various studies on the bulk and thin film characteristics of ZnS including optical and electrical properties. Zinc sulfide has two types of crystal structures; hexagonal wurtzite and cubic zinc blende, it has a cubic crystal structure in its most stable state.