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Structural, optical and electrical, properties of As-Se-Tl films


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  • Product Description

Bulk alloys of A‎s-Se-Tl were synthesized by weighting out ‎suitable proportions of the required compositions with purity ‎‎5N. Melting them up to 875 C for 16 hours followed by rapid ‎quenching in ice water.‎Thermal evaporation technique was used ‎to prepare A‎s-Se-Tl films on glass substrates. The produced ‎films have 200 nm thickness. X-ray diffraction and differential ‎scanning calorimetry were used to investigate the film structural ‎properties. The nature of the produced alloys, ‎Glass transition, ‎crystallization temperature and melting point as well as the ‎permittivity of the as-deposited and annealed films up to 373 K ‎were studied as function of Tl-content. Optical constants like ‎dispersion energy, high frequency dielectric constant, lattice ‎dielectric constant, and the oscillator energy were determined. ‎Composition effect on the dc electrical properties was ‎investigated in the temperature range (175-375)K. Hopping ‎conduction ‎dominates at low temperature region (173-300) K. ‎At the high temperature region (300-373) K, band conduction ‎occurs. Seebeck coefficient, a.c conductivity‎ and related ‎constants were determined.‎

Product Specifications
SKU :COC91838
AuthorAdel Eldenglawey
Number of Pages152
Publishing Year2013-01-24T00:00:00.000
Edition1 st
Book TypeElectronics & communications engineering
Country of ManufactureIndia
Product BrandLAP LAMBERT Academic Publishing
Product Packaging InfoBox
In The Box1 Piece
Product First Available On ClickOnCare.com2015-10-08 00:00:00
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