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Studies on structural and dielectric properties of ?-Ga2O3 thin films

Studies on structural and dielectric properties of ?-Ga2O3 thin films

 

Marketed By :  LAP LAMBERT Academic Publishing   Sold By :  Kamal Books International  
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  • Product Description
 

In this study we report on structural and electric properties of ?-Ga2O3 on Si and GaN substrates. Since Ga2O3 has a band-gap of 4.8 eV at room temperature and a dielectric constant of 10.2~14.2, Ga2O3 can be a potential candidate dielectrics for MIS devices. ?-Ga2O3 has been deposited using various techniques such as radio-frequency sputtering, plasma enhanced atomic layer deposition (PEALD), and pulsed laser deposition (PLD). In particular, epitaxial Ga2O3 thin films grown on n-GaN/Al2O3 substrate by PLD technique have a monoclinc ?-Ga2O3 phase and peaks were indexed as (-2 0 1) and higher order diffractions. Optical transmittance of the epitaxial ?-Ga2O3 film was more than 90% from UV to visible spectral regions and the optical band-gap of the ?-Ga2O3 was calculated to be about 4.8 eV. Moreover, we have fabricated MFIS capacitors using Ga2O3 and Ba0.5Sr0.5TiO3 (BST) thin films on GaN/Al2O3 substrate by pulsed laser deposition. The epitaxial growth, structural analysis, and dielectric properties of the Ga2O3 films and BST thin films will be discussed.

Product Specifications
SKU :COC61387
Country of ManufactureIndia
Product BrandLAP LAMBERT Academic Publishing
Product Packaging InfoBox
In The Box1 Piece
Product First Available On ClickOnCare.com2015-08-05
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