☰ Category

Studies on Vanadium based Schottky Contacts to n-type Indium Phosphide


Marketed By :  LAP LAMBERT Academic Publishing   Sold By :  Kamal Books International  
Delivery in :  10-12 Business Days


Check Your Delivery Options

Rs. 4,835

Availability: In stock

  • Product Description

Indium phosphide (InP) with a direct band gap of 1.35 eV is a promising material for photovoltaic solar energy conversion. The high radiation resistance and potentially high efficiency make InP solar cells excellent candidates for eventually using in space. InP and its related compounds have found potential applications in the design of high speed devices such as field effect transistors and high electron mobility transistor (FET, HEMT), charge coupled devices, solar and integrated optoelectronic devices such as radiation detectors and chemical sensors. InP schottky diodes are of special interest because of its special properties such as large mobility required for high speed devices, optimum bandgap for photovoltaic conversion and radiation resistance for solar cells.

Product Specifications
SKU :COC90242
AuthorS. Sankar Naik and V. Rajagopal Reddy
Number of Pages164
Publishing Year2013-05-06T00:00:00.000
Edition1 st
Book TypePhysics
Country of ManufactureIndia
Product BrandLAP LAMBERT Academic Publishing
Product Packaging InfoBox
In The Box1 Piece
Product First Available On ClickOnCare.com2015-10-08 00:00:00
0 Review(s)