Call Us 080-41656200 (Mon-Sat: 10AM-8PM)
Free Shipping above Rs. 1499
Cash On Delivery*

Study of Defect States in Silicon Carbide


Marketed By :  LAP LAMBERT Academic Publishing   Sold By :  Kamal Books International  
Delivery in :  10-12 Business Days


Check Your Delivery Options

Rs. 4,835

Availability: In stock

  • Product Description

Current power electronics world require semiconductor devices which are capable of highly reliable performances under extreme conditions of voltages and temperature. Wide band gap semiconductors are more suitable in comparison to the traditional semiconductors in such cases. One such semiconductor currently in focus is SiC. This book describes the strucutral, electronic and magnetic properties of SiC. It presents the results of coputational studies of few intrinsic and extrinsic impurities in SiC and their combination too. Many conclusions are found which can throw some light on its practical usefulness. The impurities considered are, B, Al, Ga, Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn and W. We have used first principle density functional theory with different exchange and correlation schemes using pseudopotentials to perform the electronic structure calculations of several defects in SiC. The theoretical background for computation has also been described in this book.

Product Specifications
SKU :COC90296
AuthorPadmaja Patnaik,Gautam Mukhopadhyay and Prabhakar P. Singh
Number of Pages200
Publishing Year2013-08-02T00:00:00.000
Edition1 st
Book TypePhysics
Country of ManufactureIndia
Product BrandLAP LAMBERT Academic Publishing
Product Packaging InfoBox
In The Box1 Piece
Product First Available On ClickOnCare.com2015-10-08 00:00:00