Category

share

Synthesis and modifications of GaN by ion beams

Synthesis and modifications of GaN by ion beams

 

Marketed By :  Scholars' Press   Sold By :  Kamal Books International  
Delivery in :  10-12 Business Days

 
₹ 4,463

Availability: Out of stock

 

Delivery :

5% Cashback on all Orders paid using MobiKwik Wallet T&C

Free Krispy Kreme Voucher on all Orders paid using UltraCash Wallet T&C
Product Out of Stock Subscription

(Notify me when this product is back in stock)

  • Product Description
 

The motive of the work was to study the different aspect of synthesis of GaN with different routes and modify the structural, optical, electrical and magnetic properties. GaN thin films of high epitaxial quality were deposited with ion beam assisted molecular beam epitaxy technique.As-deposited GaN films were implanted with 180 keV Co ions at different fluences. The structural properties were investigated with high resolution X-ray diffraction as well as with RBS/C technique. SQUID measurements were performed to study the magnetic properties of the implanted and annealed samples with RTA at 1150 °C for 20 s. The ferromagnetic hysteresis loop was observed. Both the field cooled and zero field cooled curve intersect at the temperature of 350 K, which implies that the magnetic ordering persists even at the temperature higher than the room temperature.For the application point of view, Au/n-GaN Schottky diodes were fabricated and in-situ current-voltage measurements were performed during ion irradiation.To summarise, different ion beams in different energy regime were used to synthesize GaN films as well as modifying the properties of GaN in a controlled way.

Product Specifications
SKU :COC61866
Country of ManufactureIndia
Product BrandScholars' Press
Product Packaging InfoBox
In The Box1 Piece
Product First Available On ClickOnCare.com2015-08-05
0 Review(s)