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Terahertz and Electro-Optical Properties of III–V Compounds

 

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  • Product Description
 

This work describes the terahertz (THz), optical and electrical properties of GaSb, InSb, AlSb, GaInSb, and AlInSb alloy crystals grown by vertical Bridgman technique. Theoretical analysis using the ConwellWeisskopf and Brooks-Herring approaches indicate the transport and optical properties of highly compensated GaSb substrates are dominated by ionized impurity scattering. Also, enhanced emission of terahertz (THz) radiation has been observed from impurity compensated GaSb substrates. Time domain THz emission spectroscopy (TDTES) measurements show strong emission of THz radiation for the highest tellurium compensated samples of either p? or n?type conductivity. Theoretical analysis show that both mechanisms, the photo–Dember effect and the surface field effect, are responsible for the enhanced THz generation in the tellurium compensated GaSb substrates. Depending on the electrical properties of the semiconductor material, either one of the two mechanisms is dominant. For instance, the photo– Dember effect is responsible for THz generation p?type samples, and the surface field effect is responsible for THz generation in n?type samples.

Product Specifications
SKU :COC27542
AuthorRobinson Pino
LanguageEnglish
BindingPaperback
Number of Pages308
Publishing Year10/29/2010
ISBN978-3843369626
Edition1 st
Book TypePhysics
Country of ManufactureIndia
Product BrandLAP LAMBERT Academic Publishing
Product Packaging InfoBox
In The Box1 Piece
Product First Available On ClickOnCare.com2015-07-29 00:00:00
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