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THE RELIABILITY OF STRAINED SI MOSFETS ON VARIED TECHNOLOGY PLATFORMS

 

Marketed By :  LAP LAMBERT Academic Publishing   Sold By :  Kamal Books International  
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  • Product Description
 

The reliability of strained Si devices on several technology platforms has been investigated, highlighting the advantages and disadvantages in each case. The devices had biaxial strain induced through the use of a SiGe strain relaxed buffer or uniaxial strain induced through the use of strained nitride liners or stress memorisation. Since there is much literature demonstrating the benefits of using strain engineering to enhance drive current and speed, the aim of this thesis has been to present several aspects of device reliability that have not been studied previously and to demonstrate the need for significantly more research.

Product Specifications
SKU :COC29037
AuthorRimoon Agaiby
LanguageEnglish
BindingPaperback
Number of Pages176
Publishing Year5/23/2010
ISBN978-3838363325
Edition1 st
Book TypePhysics
Country of ManufactureIndia
Product BrandLAP LAMBERT Academic Publishing
Product Packaging InfoBox
In The Box1 Piece
Product First Available On ClickOnCare.com2015-07-29 00:00:00
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