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Two-dimensional electron transport in GaN/GaAs based heterostructures


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  • Product Description

This book is on the fundamental studies of electron transport in different 2DEG systems. Electron transport in wide range of GaN samples were studied including in a high carrier density regime where a second conductive subband channel was occupied. The spin-orbit interaction were studied in the GaN heterostructures by using the weak antilocalization measurements. We also studied the energy relaxation processes in the GaN systems to understand the power dissipation. The second topic was electron dynamics on Quantum Hall liquid in GaAs system. We were able to study the Quantum Hall liquids in their deep insulating regime by using single electron transistors. The objective was to understand the charge motions in the quantum Hall liquid in an antidot structure, a particularly important structure for possible device applications in quantum computation. We have also shown that the response associated with the motion of electrons in the bulk of the integer quantum Hall layer could be enhanced by using multiple layers. This finding led us to a magnetometer application which was demonstrated by using a heterostructure with 25 identical multiple quantum wells.

Product Specifications
SKU :COC61864
AuthorHailing Cheng
Number of Pages248
Publishing Year20.03.2014
Edition1 st
Book TypePhysics
Country of ManufactureIndia
Product BrandLAP LAMBERT Academic Publishing
Product Packaging InfoBox
In The Box1 Piece
Product First Available On ClickOnCare.com2015-08-05 00:00:00
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